• 一种12位100 kS/s R-C混合型SAR ADC

    A 12 bit 100 kS/s R-C hybrid SAR ADC

    • 提出了一种单调性优异的R-C混合型 SAR ADC。其高八位DAC采用电阻型结构,低四位DAC采用电容型结构,通过高八位DAC中电阻串分压结构将基准电压进行等分,选择与输入采样信号最接近的电压,再将该电压输入至低四位电容型DAC中进行电荷重分配过程,最终实现12位DAC输出。为减小工艺失配引起的误差,此低四位CDAC仅包括比例为15CC的两个电容,其中15C电容接高八位电阻型DAC的输出电压,该电压受高八位控制信号D11:4影响,而C电容所连接的电压值也由高八位电阻型DAC输出,该电压受高八位与低四位控制信号D11:0影响。由于低四位电容型DAC的输入电压只与高八位电阻型DAC输出电压相关,同时电阻型DAC具有较好的单调性,因此只需保证低四位DAC中15CC之间匹配良好,就可以获得优异的单调性。同时,该SAR ADC兼容差分输入和单端输入模式。基于华虹GRACE 0.11 µm CMOS工艺进行设计和实现后,仿真结果表明:在各个工艺角、温度情况下,该SAR ADC的DNL、INL均小于±1 LSB,典型情况下ENOB为11.4 bit,最大功耗不超过600 μA,能够适用于中高精度、低成本的应用需求。

       

      Abstract: An R-C hybrid SAR ADC with excellent monotonicity is proposed, in which the high-eight-bit digital-to-analog converter adopts a resistive structure, and the low-four-bit DAC adopts a capacitive structure. The reference voltage is divided equally through the resistive divider in the high-eight-bit DAC, and the voltage closest to the input sampling signal is selected as the output of high-eight-bit DAC. Then the result is input to the low-four-bit capacitive DAC for charge redistribution process, and finally the 12-bit DAC output is realized. In order to reduce the error caused by process mismatch, the lower-four-bit capacitive DAC consists of only two capacitors with a ratio of 15C: C. The 15C-capacitor is connected to the output of the high-eight-bit resistive DAC, which is affected by the high-eight-bit control signal D11:4.The voltage connected to the C-capacitor is also output by the high-eight-bit resistive DAC, which is affected by both the high-eight-bit and the low-four-bit control signal D11:0. Since the input voltage of the low-four-bit capacitive DAC is only correlated with the output voltage of the high-eight-bit resistive DAC, and the resistive DAC has good monotonicity, it is only necessary to ensure that the 15C-capacitor and C-capacitor in the low-four-bit DAC are well matched to achieve good monotonicity. At the same time, the ADC is compatible with both differential and single-ended input modes. The proposed ADC is implemented using GRACE 0.11 μm CMOS process, the post-simulation results show that the differential nonlinearity and integral nonlinearity are both less than ±1 LSB in all the process corners and temperature environments. The ENOB is 11.4 bit under typical conditions, and the maximum power consumption is smaller than 600 μA, which can be suitable for medium- and high-precision and low-cost applications.

       

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