Abstract: Aiming at the traditional copper-TSV (Through-Silicon Vias) interposer manufacturing process, an ultra-thick all-silicon interposer based on low-resistance silicon-TSV structure is proposed. By using polysilicon filling and chemical mechanical polishing processes, a low-resistance silicon-TSV structure with 300∶80 is realized, and the thickness of the interposer plate reaches 300 μm. By testing the stress of the interposer, the results show that the all-silicon interfacing board with this structure has the advantages of low stress, high mechanical strength and high mechanical strength within room temperature to 200 °C. Meanwhile, the conduction performance is well tested, which can meet the application requirements of inertial device integration.