Abstract: The correlation between the Through Silicon Via (TSV) interconnect structure and the equivalent inductance and capacitance (LC) is analyzed with the quasi-static electromagnetic solver. According to the analysis, the structural parameters that determines the variation of the equivalent LC are summarized. Also, an accurate and wideband equivalent circuit modeling methodology for a complex TSV interconnect structure is proposed. This modeling methodology is derived from a de-embedding concept and based on the quasi-static electromagnetic solution. The equivalent circuit model from the proposed methodology can provide guidance to silicon-package designers for impedance matching analysis of TSV interconnects. With the guidance from the equivalent circuit model, the TSV interconnect with the optimum signal integrity performance can be designed with the minimum structural modification.