Abstract: In the turn-off process of Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors (SiC MOSFET), conventional gate driver applies large driving resistor to suppress voltage overshoot, which leads to large turn-off loss. To solve this issue, this paper designs an active gate driver for SiC MOSFET based on adaptive voltage spike suppression technique. By analyzing the turn-off process of SiC MOSFET, the mechanism of voltage overshoot is analyzed, and a scheme to suppress voltage overshoot is proposed. The driver detects the peak drain-source voltage to implement three-stage gate driving in the turn-off transition. A small driving current is used in the current falling stage to reduce voltage overshoot and large driving current is used in the other stages to minimize turn-off losses. The adaptive three-stage gate driving technology can adjust the current switching timings according to the working conditions, making it suitable under various conditions. The driver chip is implemented by using the 180 nm BCD process from DB HiTek, with an effective area of 1690 μm×1690 μm. Simulation results show that compared with conventional gate drives, under the same conditions of voltage overshoot, the turn-off time is reduced by 56.3%, and the turn-off losses are reduced by 26.6%.