• 600 Mbps高速数字隔离器设计

    A 600 Mbps high-speed digital isolator design

    • 提出了一种集成在低电压差分信号(Low-Voltage Differential Signaling, LVDS)隔离接口芯片中的高速数字隔离器电路,可广泛应用于高可靠性、高速数据传输系统中。信号的隔离传输基于脉冲极性调制方式。高速数字隔离器发送-接收电路采用全差分架构,具有较高的共摸瞬态抗扰度(Common Mode Transient Immunity, CMTI)。为减小信号的传输延迟,在发送端取消了传统设计中的边沿检测电路,采用H-桥驱动电路直接驱动变压器初级侧。为提高信号的传输速率,在接收端前端采用两个具有固定的失调电压的电容交叉耦合型共栅级低噪声放大器(Capacitor Cross-Coupled Common-Gate Low-Noise Amplifer, CCC-CGLNA),可识别变压器次级侧产生的幅值较高的信号脉冲,滤除幅值较低的反向脉冲。对提出的高速数字隔离器发送-接收电路进行了理论分析,对关键信号进行了仿真。基于180 nm 3.3 V标准CMOS工艺,完成了集成该高速数字隔离器电路的LVDS接口芯片流片,与片上变压器键合后封装。测试结果表明:LVDS信号传输速率超过600 Mbps,传输延迟小于4.5 ns,LVDS隔离接口芯片的CMTI可达35 kV/μs。由于内置刷新电路,芯片整体功耗较高。

       

      Abstract: high-speed digital isolator circuit integrated into a Low-Voltage Differential Signaling(LVDS) isolation interface chip is proposed, which can be widely used in high reliability, high data rate transmission systems. The isolated transmission of signals is based on pulse polarity modulation. The high-speed digital isolator Transmitter- Receiver(Tx-Rx) circuit adopts a fully differential architecture and has high Common Mode Transient Immunity (CMTI). To reduce the propagation delay of the signal, the edge detection circuit in the traditional design is eliminated at the transmitting end, and an H-bridge drive circuit is used to directly drive the primary side of the transformer. To improve the transmission rate of signals, two Capacitor Cross-Coupled Common-Gate Low-Noise Amplifers (CCC-CGLNA) with fixed offset voltages are used at the front end of the receiving end, which can identify the high amplitude signal pulses generated on the secondary side of the transformer and filter out the low amplitude reverse pulses. This article provides a theoretical analysis of the proposed high-speed digital isolator Tx-Rx circuit and simulates key signals. The LVDS interface chip integrated with the high-speed digital isolator circuit is fabricated on a 180 nm 3.3 V standard CMOS process and packaged after bonding with an on-chip transformer. After testing, the LVDS signal transmission rate exceeds 600 Mbps, with a propagation delay of less than 4.5 ns. The CMTI of the LVDS isolation interface chip can reach 35 kV/μs. Due to the built-in refresh circuit, the overall power consumption of the chip is relatively high.

       

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