• 基于GaN_HEMT宽带高功率放大器设计

    Design of broadband high-power amplifier based on GaN_HEMT

    • 针对GaN高功率放大器寄生大、带宽小的问题,提出了一种多枝节低损耗输出匹配网络,拓展了工作带宽、降低了功率损失,并实现了最佳基波阻抗和较小的二次谐波阻抗;同时提出了一种具有带外抑制能力的匹配网络,并用于级间和输入匹配,实现阻抗变换;输入端加入有耗匹配降低了宽带匹配难度,并增加了电路稳定性。电路芯片面积为4.4 mm×4.0 mm。后仿真表明,功放工作频率的相对带宽达到了40%;在4 ~ 6 GHz内,输入回波损耗优于−12.8 dB,输出回波损耗优于−11.2 dB,小信号增益为28.6±1.2 dB,饱和输出功率45.6 dBm(36 W),平坦度为±0.3 dBm,功率附加效率为43% ~ 48.9%,可广泛用于C波段卫星通信、雷达等无线通信领域。

       

      Abstract: In order to solve the problem of the large parasitism and small bandwidth of GaN high-power amplifiers, this paper proposes a multi-section low-loss output matching network, which expands the working bandwidth, reduces power loss, and achieves the best fundamental impedance and smaller second harmonic impedance. At the same time, a matching network with out-of-band suppression capability is proposed and used for inter-stage and input matching to achieve impedance transformation. The addition of lossy matching at the input end reduces the difficulty of broadband matching and increases the circuit stability. The chip area of the circuit is 4.4 mm×4.0 mm. The post-simulation shows that the relative bandwidth of the working frequency reaches 40%. Within 4 - 6 GHz, the input return loss of the power amplifier is better than −12.8 dB, the output return loss is better than −11.2 dB, the small-signal gain is 28.6±1.2 dB, the saturated output power is 45.6 dBm (36 W), the flatness is ±0.3 dBm, and the power-added efficiency is 43% - 48.9%. It can be widely used in C-band satellite communication, radar and other wireless communication fields.

       

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