• 高精度金属薄膜电阻工艺提升技术研究

    Research on process enhancement technology for high-precision metal thin-film resistors

    • 模拟电路对电阻器件的绝对精度与热稳定性的要求日益提高。然而,国内高精度薄膜电阻产品在成品率与一致性方面与国外同类产品存在明显差距,且缺乏成熟、完整的军用高精度薄膜电阻电路平台。本文通过对前道工艺的深入研究,对金属薄膜电阻进行结构设计与优化,结合实验和流片结果,系统分析了等效接触电阻和线宽偏差对电阻精度的影响。针对电阻热稳定性,通过在原有工艺基础上引入低温铬硅(Cr-Si)薄膜退火工艺,实现后道热过程的有效结合,显著提升了薄膜电阻的热稳定性,解决了高精度薄膜电阻设计与低温漂铬硅薄膜制备等关键技术难点,实现了薄膜电阻的绝对阻值变化量小于0.3‰。

       

      Abstract: Analog circuits impose increasingly stringent requirements on the accuracy and reliability of resistors, driving higher demands for the absolute precision and thermal stability of resistor components. However, domestically produced high-precision thin-film resistors still significantly lag behind foreign counterparts in terms of yield and consistency. Moreover, a systematic and mature platform for military-grade high-precision thin-film resistor circuits remains underdeveloped. Through research on front-end processes, this study focuses on the structural design and optimization of metal thin-film resistors. By integrating experimental results and wafer fabrication data, a comprehensive analysis is conducted on the impact of equivalent contact resistance and linewidth variations on resistor accuracy. To enhance thermal stability, a low-temperature annealing process for chromium-silicon (Cr-Si) thin films is introduced and optimized, effectively integrating with thermal treatments in back-end processes. This approach improves the thermal stability of the thin-film resistors and achieves thermal compatibility between front-end resistor fabrication and back-end processes such as chip mounting and aging. Key technologies, including high-precision thin-film resistor design and the preparation of high-precision, low-temperature-coefficient Cr-Si films, are successfully developed, ultimately reducing the absolute resistance variation to below 0.3‰.

       

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