Abstract: By introducing a vertical structure, 3D NAND FLASH memory significantly enhances storage density compared to conventional planar FLASH while effectively alleviating the physical constraints imposed by the continuous scaling of process dimensions, which shows its application prospects in aerospace electronic devices. However, the three-dimensional structure also brings new space reliability issues. 3D-stacked devices exhibit radiation response mechanisms distinct from those of planar devices. In this work, the research dynamics and trends of radiation effects in 3D NAND FLASH memory are introduced, and the radiation damage effects of 3D NAND FLASH including Total lonizing Dose effect and Single Event Effects(Heavy ions, protons, neutrons) in the space environment are presented. Involved radiation damage mechanisms and performance degradation laws are analyzed. The research shows that the 3D structural design improves radiation tolerance against both TID and SEE to some extent. Unique radiation response phenomenas inherent to 3D architectures are highlighted, such as the “U”-shaped non-uniform variation of TID response across vertical stacks and the dual secondary peaks in threshold voltage shifts under heavy-ion irradiation. Finally, considering emerging trends in 3D NAND FLASH development, particularly ultra-high stacking layers and 3D-packaged micro-modules, the future research directions and radiation hardening strategies for advanced NAND FLASH technologies are prospected.