Abstract: Based on 0.18 μm BCD process, a dual-channel/half-bridge compatible isolated gate driver is designed, which has 3V to 18 V input-side voltage, 4.5V to 35 V driver-side voltage, 6/8 A maximum source/sink current per-channe, 5.7 kV_rms isolation voltage and CMTI 150 kV/μs. A drive-mode control circuit compatible with dual-channel and half-bridge topology is designed. Through a high-voltage-tolerant pin DT, dual-channel direct-output mode, half-bridge minimum dead time mode and half-bridge programmable dead time mode can be flexibly configured. Simulation and measurement results show that dual-channel/half-bridge compatibility, the DT pin withstands high voltage reliably, and the dead time, set by an external resistor, is dynamically adjustable from 10 ns to 2 µs. With external resistors of 10 kΩ and 46 kΩ, the measured dead times are 105 ns, 103 ns and 468 ns, 457 ns respectively, deviating only 5%, 3%, and 1.7%, 0.65% from the design values.